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| 1T365 Silicon Variable Capacitance Diode For the availability of this product, please contact the sales office. Description The 1T365 is a variable capacitance diode contained in super miniature package, and used for electronic-tuning of BS tuner. Features * Super miniature package * Small capacitance 0.7 pF Typ. (VR=25 V) * Low leakage current 10 nA Max. (VR=28 V) * Small serial resistance 1.1 Typ. (VR=1 V, f=470 MHz) Structure Silicon epitaxial planar type diode M-235 Absolute Maximum Ratings (Ta=25 C) * Reverse voltage VR 30 V * Maximum reverse voltage VRM 35 V (RL10 k) * Operating temperature Topr -20 to +75 C * Storage temperature Tstg -65 to +150 C Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Serial resistance Capacitance deviation in a matching group Symbol IR C2 C25 C2/C25 rs C Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz VR=1 V, f=470 MHz VR=2 to 25 V, f=1 MHz Min. 3.31 0.61 5.0 Typ. Max. 10 4.55 0.77 1.8 5.0 (Ta=25 C) Unit nA pF pF % 0.70 5.7 1.1 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E91539A82-TE 1T365 Example of Representative Characteristics Diode capacitance vs. Reverse voltage 10 VR-Reverse voltage (V) Ta=25C f=1MHz C-Diode capacitance (pF) Reverse voltage vs. Operating ambient temperature 45 IR=10A 40 1 35 30 -20 0 20 40 60 80 100 Ta-Operating ambient temperature (C) 0.1 1 10 VR-Reverse voltage (V) 100 Reverse current vs. Operating ambient temperature 100 VR=28V 10 Reverse current vs. Reverse voltage Ta=60C IR-Reverse current (pA) IR-Reverse current (pA) 10 1.0 Ta=25C 1.0 0.1 0.1 0.01 -20 0 20 40 60 80 0.01 1 10 VR-Reverse voltage (V) 100 Ta-Operating ambient temperature (C) --2-- 1T365 Serial resistance vs. Reverse voltage 1.6 1.4 rs-Serial resistance () 1.2 1.0 0.8 0.6 0.4 0.2 0 1 rs-Serial resistance () f=470MHz Ta=25C 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 100 Serial resistance vs. Frequency VR=1V Ta=25C 2 3 5 10 20 30 VR-Reverse voltage (V) 200 500 f-Frequency (MHz) 1000 Diode capacitance vs. Operating ambient temperature 1.03 f=1MHz 1000 Temperature coefficient of diode capacitance f=1MHz C (Ta) Diode capacitance C (25C) VR=2V VR=25V VR=10V 1.01 Temperature coefficient (ppm/C) 80 1.02 100 1.00 0.99 0.98 -20 0 20 40 60 10 1 10 VR-Reverse voltage (V) 100 Ta-Operating ambient temperature (C) --3-- 1T365 Package Outline Unit : mm M-235 + 0.2 1.25 - 0.1 + 0.1 0.3 - 0.05 0.2 0.9 0.1 2 1.7 0.1 1 + 0.1 0.3 - 0.05 2.5 0.2 0 0.05 + 0.1 0.11 - 0.06 0 to 10 NOTE: Dimension "" does not include mold protrusion. SONY CODE EIAJ CODE JEDEC CODE M-235 PACKAGE WEIGHT 0.1g Marking CATHODE MARK 2 65 B Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.) 1 --4-- This datasheet has been download from: www..com Datasheets for electronics components. |
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